Method for detecting environmental parameter in semiconductor fabrication facility

A method of monitoring a semiconductor fabrication facility, comprising:

• guiding a flow of gas from a group of processing tools to a sampling station by passing a plurality of sampling tubes;
• connecting, by a valve manifold box of the sampling station, a first one of the sampling tubes connected to a first one of the group of processing tools with a connection port while isolating the other sampling tubes from the connection port;
• and
• collecting a first gas sample from the sampling station via the connection port and measuring a parameter in related to the first gas sample.

A semiconductor fabrication facility, comprising:

• a group of processing tools;
• a plurality of sampling tubes connecting the group of processing tools;
• a sampling station configured to collect gas from the sampling tubes and comprising:
• a rotatory valve, comprising:
• a first ring-shaped conduit;
• a first inlet ports connected to the first ring-shaped conduit and the one of the sampling tubes;
• a second ring-shaped conduit;
• and
• a plurality of second inlet ports connected to the second ring-shaped conduit,
• wherein the remaining sampling tubes isolated from the first inlet ports are connected to the second inlet ports;
• a connection port connected to the first ring-shaped conduit;
• and
• an exhaust port connected to the second ring-shaped conduit.