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US 11,726,405 B2Granted
Photoresist for semiconductor fabrication
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChih-Cheng Liu, Yi-Chen Kuo, Yen-Yu Chen, Jr-Hung Li, Chi-Ming Yang, Tze-Liang Lee
Life of this patent
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Abstract
An organometallic precursor for extreme ultraviolet (EUV) lithography is provided. An organometallic precursor includes an aromatic di-dentate ligand, a transition metal coordinated to the aromatic di-dentate ligand, and an extreme ultraviolet (EUV) cleavable ligand coordinated to the transition metal. The aromatic di-dentate ligand includes a plurality of pyrazine molecules.
Claims20
An extreme ultraviolet (EUV) photoresist precursor, comprising:
- an aromatic di-dentate ligand comprising a first pyrazine ring and a second pyrazine ring;
- a transition metal coordinated to a nitrogen atom on the first pyrazine ring and a nitrogen atom on the second pyrazine ring;
- a first EUV cleavable ligand coordinated to the transition metal;
- and
- a second EUV cleavable ligand coordinated to the transition metal.
2 more elements
A photoresist precursor, comprising:
- an aromatic di-dentate ligand;
- a transition metal coordinated to the aromatic di-dentate ligand;
- and
- an extreme ultraviolet (EUV) cleavable ligand coordinated to the transition metal,
- wherein the aromatic di-dentate ligand comprises a first pyrazine molecule and a second pyrazine molecule.
2 more elements
A photoresist precursor, comprising:
- a 2,2′-bipyrazine molecule;
- a transition metal coordinated to the 2,2′-bipyrazine molecule;
- and
- an extreme ultraviolet (EUV) cleavable ligand coordinated to the transition metal,
- wherein the transition metal is selected from a group consisting of tin (Sn) ion, bismuth (Bi) ion, antimony (Sb) ion, indium (In) ion, and tellurium (Te) ion.
2 more elements
Dependencies are inferred from the claim text.