Back to results
US 11,721,771 B2Granted
Liquid semiconductor-halogen based electronics
AssigneeLawrence Livermore National Security, LLC
InventorsLars Voss, Clint Frye, Roger A. Henderson, John Winter Murphy, Rebecca J. Nikolic, Dongxia Qu, Qinghui Shao, Mark A. Stoyer
Life of this patent
Estimating the term…
Abstract
According to one embodiment, a device includes a first electrode, a second electrode spaced from the first electrode, a well extending between the first electrode and the second electrode, one or more chalcogens in the well, and at least one halogen mixed with the one or more chalcogens in the well. In addition, the chalcogens are selected from the group consisting of sulfur, selenium, tellurium, and polonium.
Claims20
A device, comprising:
- a first electrode;
- a second electrode spaced from the first electrode;
- a well extending between the first electrode and the second electrode;
- one or more chalcogens in the well, the one or more chalcogens being selected from the group consisting of sulfur, selenium, tellurium, and polonium;
- and
- at least one halogen mixed with the one or more chalcogens in the well,
- wherein the at least one halogen is present in an effective amount to suppress the melting point of the one or more chalcogens by at least 5 degrees Celsius.
4 more elements
A device, comprising:
- a first electrode;
- a second electrode spaced from the first electrode;
- a well extending between the first electrode and the second electrode;
- and
- a mixture in the well, the mixture comprising at least one halogen and at least one semiconductor material selected from the group consisting of sulfur, selenium, tellurium, and polonium,
- wherein the at least one halogen is present in an amount of greater than 1.0 at. % in the mixture to suppress the melting point of the semiconductor material.
3 more elements
A heterojunction device, comprising:
- a first electrode wherein the first electrode comprises a metal;
- a second electrode spaced from the first electrode, wherein the second electrode comprises a first semiconductor material;
- a well extending between the first electrode and the second electrode;
- and
- a mixture in the well, the mixture comprising a liquid semiconductor material and at least one halogen wherein the liquid semiconductor material is a second semiconductor material, wherein the first semiconductor material is different from the second semiconductor material,
- wherein the at least one halogen is present in an effective amount to suppress the melting point of the liquid semiconductor material by at least 5 degrees Celsius.
3 more elements
Dependencies are inferred from the claim text.