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US 11,716,906 B2Granted
MEMS process power
AssigneeQUALCOMM Technologies, Inc.
InventorRobert J. Littrell
Life of this patent
Estimating the term…
Abstract
A transducer includes a first piezoelectric layer; and a second piezoelectric layer that is above the first piezoelectric layer; wherein the second piezoelectric layer is a more compressive layer with an average stress that is less than or more compressive than an average stress of the first piezoelectric layer.
Claims21
A transducer comprising:
- a first piezoelectric layer;
- and
- a second piezoelectric layer that is above the first piezoelectric layer;
- wherein the first piezoelectric layer has a non-uniform amount of residual stress that becomes more tensile as a thickness of the first piezoelectric layer increases, and the second piezoelectric layer has an average residual stress that is more compressive than an average residual stress of the first piezoelectric layer, or
- wherein the first piezoelectric layer has a non-uniform amount of residual stress that becomes more compressive as the thickness of the first piezoelectric layer increases, and the second piezoelectric layer has an average residual stress that is more tensile than an average residual stress of the first piezoelectric layer.
2 more elements
Dependencies are inferred from the claim text.