Matchless plasma source for semiconductor wafer fabrication

A plasma system comprising:

• a matchless plasma source including:
• a direct current (DC) rail having an output;
• an arbitrary waveform generator coupled to the DC rail, wherein the arbitrary waveform generator is configured to provide a plurality of voltage values to the DC rail, wherein the plurality of voltage values are provided to shape an amplified square waveform generated at the output of the DC rail, wherein the amplified square waveform is shaped to provide a shaped waveform at the output of the DC rail;
• a reactive circuit coupled to the DC rail, wherein the reactive circuit is configured to receive the shaped waveform and remove a plurality of harmonics from the shaped waveform to provide a sinusoidal radio frequency (RF) waveform;
• and
• a plasma chamber including an electrode, wherein the electrode is coupled to the matchless plasma source to receive the sinusoidal RF waveform.