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US 11,716,555 B2Granted
Light detecting device
AssigneeSony Corporation
InventorsTomohiro Ohkubo, Suzunori Endo
Life of this patent
Estimating the term…
Abstract
A solid-state image sensor includes a semiconductor substrate having a photoelectric conversion element converting incident light into a charge and a charge retaining section temporarily retaining the charge photoelectrically converted by the photoelectric conversion element and a light shielding section having an embedded section extending in at least a region between the photoelectric conversion element and the charge retaining section of the semiconductor substrate.
Claims16
A light detecting device, comprising:
- a semiconductor substrate including a first surface and a second surface, wherein the first surface is a light receiving side of the semiconductor substrate, and wherein the second surface is a side of the semiconductor substrate opposite to the light receiving side of the semiconductor substrate;
- a first photoelectric conversion element disposed in the semiconductor substrate;
- transistors disposed at the second surface side of the semiconductor substrate;
- and
- a light shielding section, wherein at least a first portion of the light shielding section is disposed over the first surface and overlaps the transistors in a plan view, wherein the first portion of the light shielding section does not overlap the first photoelectric conversion element in the plan view, wherein a second portion of the light shielding section is disposed in a trench, and wherein the first portion of the light shielding section is in direct contact with the second portion of the light shielding section.
2 more elements
Dependencies are inferred from the claim text.