Array substrate, preparation method thereof, and display panel
AssigneeBoe Technology Group Co., Ltd.
InventorsGuangcai Yuan, Xue Dong, Feng Guan, Yupeng Gao
Life of this patent
Estimating the term…
Loading patent…
AssigneeBoe Technology Group Co., Ltd.
InventorsGuangcai Yuan, Xue Dong, Feng Guan, Yupeng Gao
Estimating the term…
This disclosure provides an array substrate, a method for preparing the array substrate, and a display panel. The method includes: forming a first thin film transistor and a second thin film transistor on a base substrate. In the formation of an active layer of the first thin film transistor, by using an eutectic point of the catalyst particle and silicon, and a driving factor that the Gibbs free energy of amorphous silicon is greater than that of crystalline silicon (silicon-based nanowire), and due to absorption of the amorphous silicon by the molten catalyst particle to form a supersaturated silicon eutectoid, the silicon nucleates and grows into a silicon-based nanowire. Moreover, during the growth of the silicon-based nanowire, the amorphous silicon film grows linearly along guide structure under the action of the catalyst particle, thus obtaining a silicon-based nanowire with a high density and high uniformity.
A method for preparing an array substrate, comprising:
Dependencies are inferred from the claim text.