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US 11,715,629 B2Granted
Plasma processing device member, plasma processing device comprising said plasma processing device member, and method for manufacturing plasma processing device member
AssigneeKYOCERA Corporation
InventorsKazuhiro Ishikawa, Takashi Hino, Shuichi Saito
Life of this patent
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Abstract
A plasma processing device member according to the disclosure includes a base material and a film formed of an oxide, or fluoride, or oxyfluoride, or nitride of a rare-earth element, the film being disposed on at least part of the base material, the film including a surface to be exposed to plasma, the surface having an area occupancy of open pores of 8% by area or more, and an average diameter of open pores of 8 μm or less.
Claims7
A plasma processing device member, comprising:
- a base material;
- and
- a film formed of an oxide, or fluoride, or oxyfluoride, or nitride of a rare-earth element, the film being disposed on at least part of the base material,
- the film comprising a surface to be exposed to plasma, the surface having an area occupancy of open pores of 8% by area or less, and an average diameter of open pores of 8 μm or less,
- wherein the film is provided with a cavity which extends in a thickness direction of the film from a recess located at a surface of the base material which faces the film, and the cavity terminates within the film.
2 more elements
Dependencies are inferred from the claim text.