Method of forming plasma processing apparatus, related apparatus, and method of forming semiconductor device using the same

A method of forming a semiconductor device using a plasma processing apparatus, the method comprising:

• loading a substrate in a chamber, the chamber including a wall defining an interior, and a viewport extending through the wall;
• and
• monitoring a state of the interior of the chamber through an analysis apparatus connected to the viewport,
• wherein:
• the analysis apparatus includes:
• an analyzer adjacent to the chamber,
• a probe connected to the analyzer and aligned with the viewport,
• a first window aligned with the probe, the first window having a first surface, and a second surface at an opposite side relative to the first surface, the second surface being exposed to the interior of the chamber, and
• a second window between the first window and the probe,
• the second surface of the first window has a scattering surface,
• each of the first window and the second window contacts the wall, and
• a roughness of the second surface of the first window is rougher than a roughness of the first surface of the first window.

A plasma processing apparatus, comprising:

• a chamber, the chamber including a wall defining an interior, and a viewport extending through the wall;
• and
• an analysis apparatus connected to the viewport,
• wherein:
• the analysis apparatus includes:
• an analyzer adjacent to the chamber,
• a probe connected to the analyzer and aligned with the viewport,
• a first window aligned with the probe, the first window having a first surface, and a second surface at an opposite side relative to the first surface, the second surface being exposed to the interior of the chamber, and
• a second window between the first window and the probe,
• the second surface of the first window has a scattering surface, and
• each of the first window and the second window contacts the wall.