Wafer structure

A wafer structure, comprising:

• a chip substrate being a silicon substrate and fabricated by a semiconductor process;
• and a plurality of inkjet chips comprising at least one first inkjet chip and at least one second inkjet chip directly formed on the chip substrate, respectively, whereby the plurality of inkjet chips are diced into the at least one first inkjet chip and the at least one second inkjet chip, to be implemented for inkjet printing, wherein a printing swath of the first inkjet chip and the printing swath of the second inkjet chip are different to each other, and the at least one first inkjet chip has the printing swath ranging from 0.25 inches to 1.5 inches and the at least one second inkjet chip has the printing swath ranging from 1.5 inches to 12 inches,
• wherein each of the at least one first inkjet chip and the at least one second inkjet chip comprises:
• at least one ink-supply channel configured to provide ink;
• and
• a plurality of ink-drop generators respectively connected to the at least one ink-supply channel and formed on the chip substrate,
• wherein each of the ink-drop generators comprises a resistance heating layer disposed on the chip substrate, a conductive layer formed on the resistance heating layer, a protective layer partially formed on the resistance heating layer and partially formed on the conductive layer, a barrier layer directly formed on the protective layer, an ink-supply chamber and a nozzle, the ink-supply chamber and the nozzle are integrally formed in the barrier layer, and a top of the ink-supply chamber is in communication with the nozzle,
• wherein the plurality of nozzles are directly exposed on a surface of the inkjet chips and disposed in a required arrangement, wherein the plurality of ink-drop generators are arranged in a longitudinal direction to form a plurality of longitudinal axis array groups having a pitch maintained between two adjacent ink-drop generators in the longitudinal direction,
• wherein the barrier layer includes two opposite inner sidewalls defining two opposite sides of the ink-supply chamber, each of the two opposite inner sidewalls of the barrier layer continuously extends from a respective one of two opposite sides of a top surface of a continuous portion of the protective layer toward the nozzle, the two opposite inner sidewalls of the barrier layer entirely and directly overlap with the conductive layer in a direction normal to a bottom of the ink-supply chamber, and the top surface of the continuous portion of the protective layer is the bottom of the ink-supply chamber, and
• wherein an ink supply path is formed between the at least one ink-supply channel and the ink-supply chamber of each of the plurality of ink-drop generators, and the ink supply path is configured to supply the ink from the at least one ink-supply channel to the ink-supply chamber in a plane parallel with the bottom of the ink supply chamber.