Method of forming semiconductor-on-insulator (SOI) substrate

A method of forming a semiconductor-on-insulator (SOI) substrate, comprising:

• performing a first thermal process to form a plurality of bulk micro defects within a handle substrate;
• performing a second thermal process to form a plurality of bulk macro defects (BMDs) within the handle substrate by increasing sizes of the plurality of bulk micro defects;
• performing a third thermal process to remove some of the plurality of BMDs from within a first denuded region and a second denuded region arranged along opposing surfaces of the handle substrate, wherein the second thermal process is performed prior to the third thermal process;
• forming an insulating layer onto the handle substrate;
• and
• forming a device layer comprising a semiconductor material onto the insulating layer.

A method of forming a semiconductor structure, comprising:

• forming a plurality of bulk micro defects within a handle substrate;
• increasing sizes of the plurality of bulk micro defects to form a plurality of bulk macro defects (BMDs) within the handle substrate;
• removing some of the plurality of BMDs from within a first denuded region and a second denuded region arranged along opposing surfaces of the handle substrate;
• forming an insulating layer onto the handle substrate;
• forming a device layer comprising a semiconductor material onto the insulating layer, wherein the insulating layer separates the handle substrate from the device layer;
• and
• wherein the first denuded region and the second denuded region vertically surround a central region of the handle substrate that has a higher concentration of the plurality of BMDs than both the first denuded region and the second denuded region, wherein the central region has a concentration of BMDs that is between approximately 8×108 BMDs/cm3 and approximately 9×109 BMDs/cm3.