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US 11,710,624 B2Granted
Sputtering method
AssigneeBeijing Naura Microelectronics Equipment Co., Ltd.
InventorsBingliang Guo, Huaichao Ma, Andong Sun, Henan Zhang, Boyu Dong, Lu Zhang, Yujing Chen
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Abstract
A sputtering method includes one or more sputtering processes. Each sputtering process includes in a first pre-sputtering phase, sputtering a target material on a baffle plate configured to shield a substrate; in a second pre-sputtering phase, sputtering a target material compound on the baffle plate; and in a main sputtering phase, sputtering the target material compound on the substrate. The first pre-sputtering phase is used to adjust a sputtering voltage for the main sputtering phase.
Claims9
A sputtering method, comprising:
- one or more sputtering processes, each sputtering process including:
- in a first pre-sputtering phase, sputtering a target material on a baffle plate configured to shield a substrate;
- in a second pre-sputtering phase, sputtering a target material compound on the baffle plate;
- in a main sputtering phase, sputtering the target material compound on the substrate,
- wherein the first pre-sputtering phase is used to adjust a sputtering voltage for the main sputtering phase by a parameter adjusting process, the parameter adjusting process including:
- adjusting a process parameter of the first pre-sputtering phase to adjust the sputtering voltage of the main sputtering phase, the process parameter including processing time,
- wherein the one or more sputtering processes are performed more than twice;
- and the parameter adjusting process is performed after every N sputtering processes, N being an integer greater than or equal to 1,
- wherein the parameter adjusting process further includes:
- detecting and recording sputtering voltages of main sputtering phases in the N sputtering processes;
- and
- determining whether a sputtering voltage of a main sputtering phase in an N-th sputtering process exceeds a reference voltage range:
- in response to the sputtering voltage of the main sputtering phase in the N-th sputtering process exceeding an upper limit of the reference voltage range, increasing a processing time of a first pre-sputtering phase in an (N+1)-th sputtering process;
- and
- in response to the sputtering voltage of the main sputtering phase in the N-th sputtering process exceeding a lower limit of the reference voltage range, reducing the processing time of the first pre-sputtering phase in the (N+1)-th sputtering process to cause a sputtering voltage of a main sputtering phase in the (N+1)-th sputtering process to be in the reference voltage range.
12 more elements
A sputtering method, comprising:
- one or more sputtering processes, each sputtering process including:
- in a first pre-sputtering phase, sputtering a target material on a baffle plate configured to shield a substrate;
- in a second pre-sputtering phase, sputtering a target material compound on the baffle plate;
- in a main sputtering phase, sputtering the target material compound on the substrate,
- wherein the first pre-sputtering phase is used to adjust a sputtering voltage for the main sputtering phase by a parameter adjusting process, the parameter adjusting process including:
- adjusting a process parameter of the first pre-sputtering phase to adjust the sputtering voltage of the main sputtering phase, the process parameter including processing time,
- wherein the one or more sputtering processes are performed more than twice;
- and the parameter adjusting process is performed after every N sputtering processes, N being an integer greater than or equal to 1,
- wherein the parameter adjusting process further includes:
- detecting and recording sputtering voltages of main sputtering phases from an (N−M)-th sputtering process to an N-th sputtering process, N being the integer greater than or equal to 2, M being an integer greater than or equal to 1, and M<N;
- and
- comparing a sputtering voltage of a main sputtering phase of the N-th sputtering process with a first set voltage and a second set voltage, the first set voltage being larger than the second set voltage:
- in response to the sputtering voltage of the main sputtering phase in the N-th sputtering process being larger than the first set voltage, increasing processing time of a first pre-sputtering phase in an (N+1)-th sputtering process by a first pre-set time length;
- and
- in response to the sputtering voltage of the main sputtering phase in the N-th sputtering process being smaller than the second determined voltage, reducing the processing time of the first pre-sputtering phase in the (N+1)-th sputtering process by the first pre-set time length.
12 more elements
Dependencies are inferred from the claim text.