Chalcogenide material, variable resistance memory device and electronic device

A variable resistance memory device comprising:

• a first electrode;
• a second electrode;
• and
• a chalcogenide film in an amorphous state interposed between the first electrode and the second electrode,
• wherein the chalcogenide film includes a group 13 element, a group 14 element, a group element, and a group 16 element,
• wherein a sum of a concentration of the group 14 element, a concentration of the group element, and a concentration of the group 16 element is from 97 at % to 99.5 at %, and
• wherein a concentration of the group 13 element is from 0.5 at % to 3 at % of at least one group 13 element.

An electronic device comprising a semiconductor memory,

• wherein the semiconductor memory comprises:
• a column line;
• a row line intersecting the column line;
• and
• a memory cell positioned between the column line and the row line,
• wherein the memory cell comprises a chalcogenide film in an amorphous state including germanium (Ge), arsenic (As), selenium (Se), and from 0.5 to 3 at % of at least one group 13 element, and
• wherein a sum of a concentration of the germanium (Ge), a concentration of the arsenic (As) and a concentration of the selenium (Se) is from 97 at % to 99.5 at %.