Back to results
US 11,707,004 B2Granted
Phase-change memory
AssigneeYangtze Memory Technologies Co., Ltd.
InventorGang Yuan
Life of this patent
Estimating the term…
Abstract
A phase-change memory (PCM) device includes a first electrode, a second electrode, a memory layer, and a heater. The memory layer includes a phase-change material and is electrically coupled between the first electrode and the second electrode. The heater is arranged near the memory layer and is configured to heat a programming region of the memory layer in response to an electric current that passes through the heater. The heater is coupled to a power source via an electric current path that does not pass through the memory layer.
Claims17
A phase-change memory device, comprising:
- a first electrode and a second electrode;
- a memory
- layer under the first electrode and over the second electrode the memory layer comprising a programming region comprising a phase-change material;
- an isolation layer sandwiched between the memory layer and the second electrode the isolation layer containing a conductor layer and a heater that are isolated from each other,
- wherein:
- the conductor layer and the heater are on a same side and under a bottommost surface of the memory layer,
- the conductor layer connects the programming region with the second electrode and is configured as a main heater to heat the programming region for a phase-change process, and
- the heater is in a proximal distance from the memory layer, and is configured as an auxiliary heater to heat the programming region for removing voids from the programming region of the memory layer.
5 more elements
Dependencies are inferred from the claim text.