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US 11,707,002 B2Granted
CBRAM with controlled bridge location
AssigneeInternational Business Machines Corporation
InventorsJianshi Tang, Takashi Ando, Reinaldo Vega, Praneet Adusumilli
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Abstract
Devices with settable resistance and methods of forming the same include forming vertical dielectric structures from heterogeneous dielectric materials on a first electrode. A second electrode is formed on the vertical dielectric structures.
Claims17
A conductive bridge random access memory (CBRAM) device, comprising:
- a first electrode;
- a plurality of vertical dielectric structures formed from heterogeneous dielectric materials on the first electrode, including:
- a mandrel, formed from a first dielectric material that includes a hardmask material, that partially covers the first electrode;
- a first sidewall spacer, formed from a second dielectric material, different from the first dielectric material, on a sidewall of the mandrel;
- a second sidewall spacer, formed from a third dielectric material, different from the second dielectric material, on a sidewall of the second sidewall spacer;
- and
- a third sidewall spacer, formed from the second dielectric material, on a sidewall of the second sidewall spacer;
- and
- a second electrode on the plurality of vertical dielectric structures.
6 more elements
A conductive bridge random access memory (CBRAM) device, comprising:
- a first electrode;
- a plurality of vertical dielectric structures formed from heterogeneous dielectric materials on the first electrode, including:
- a mandrel, formed from a first dielectric material that includes a hardmask material, that partially covers the first electrode;
- a first sidewall spacer, formed from a second dielectric material, different from the first dielectric material, on a sidewall of the mandrel;
- a second sidewall spacer, formed from a third dielectric material, different from the second dielectric material, on a sidewall of the second sidewall spacer;
- and
- a third sidewall spacer, formed from the second dielectric material, on a sidewall of the second sidewall spacer;
- spacer remnants on a sidewall of the first electrode that correspond to materials of the plurality of vertical dielectric structures;
- and
- a second electrode on the plurality of vertical dielectric structures, formed from a material that undergoes electromigration when a current is applied.
7 more elements
A conductive bridge random access memory (CBRAM) device, comprising:
- a first electrode;
- a plurality of vertical dielectric structures formed from heterogeneous dielectric materials on the first electrode;
- a second electrode on the plurality of vertical dielectric structures;
- and
- spacer remnants on a sidewall of the first electrode that correspond to materials of the plurality of vertical dielectric structures, comprising three layers of dielectric material positioned side-by-side.
2 more elements
Dependencies are inferred from the claim text.