Back to results
US 11,707,001 B2Granted
Phase-change resistive memory
AssigneeCommissariat A L'energie Atomique Et Aux Energies Alternatives
InventorGabriele Navarro
Life of this patent
Estimating the term…
Abstract
A phase change resistive memory includes an upper electrode; a lower electrode; a layer made of an active material, called an active layer; the memory passing from a highly resistive state to a weakly resistive state by application of a voltage or a current between the upper electrode and the lower electrode and wherein the material of the active layer is a ternary composed of germanium Ge, tellurium Te and antimony Sb, the ternary including between 60 and 66% of antimony Sb.
Claims3
A method for manufacturing a phase-change resistive memory including
- an upper electrode;
- a lower electrode;
- an active layer made of an active material;
- the memory switching from a high resistivity state to a low resistivity state by applying a voltage between the upper electrode and the lower electrode, the material of the active layer being a ternary composed of germanium Ge, tellurium Te and antimony Sb, the ternary including 10% of germanium Ge, 27% of tellurium Te and 63% of antimony Sb, the material of the active layer being in a polycrystalline phase in the high resistivity state and in a crystalline phase in the low resistivity state, the method comprising the steps performed in the following order:
- a step of conformably depositing a conducting material layer of the lower electrode onto a substrate;
- a step of sputtering using two sputtering targets to form the active layer, a target composed of the element of the chemical formula Ge2Sb2Te5 and a target composed of antimony Sb, and
- a step of conformably depositing a conducting material layer of the upper electrode,
- wherein the switching from the high resistivity state to the low resistivity state in said memory is obtained by growth of crystals of the polycrystalline phase.
5 more elements
Dependencies are inferred from the claim text.