Side-gating in selective-area-grown topological qubits
AssigneeMicrosoft Technology Licensing, LLC
InventorsDmitry Pikulin, Michael H. Freedman, Roman Lutchyn, Peter Krogstrup Jeppesen, Parsa Bonderson
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Abstract
A quantum device is fabricated by forming a network of nanowires oriented in a plane of a substrate to produce a Majorana-based topological qubit. The nanowires are formed from combinations of selective-area-grown semiconductor material along with regions of a superconducting material. The selective-area-grown semiconductor material is grown by etching trenches to define the nanowires and depositing the semiconductor material in the trenches. A side gate is formed in an etched trench and situated to control a topological segment of the qubit.
Claims15
A method for fabricating a quantum device, the method comprising:
- providing a substrate and an insulator formed on the substrate;
- from combinations of selective-area-grown semiconductor material along with regions of a superconducting material, forming a network of nanowires oriented in a plane of the substrate that is gateable to produce a Majorana-based topological qubit;
- and
- fabricating a side gate for controlling a topological segment of the Majorana-based topological qubit;
- wherein the selective-area-grown semiconductor material is grown on the substrate by etching trenches in the insulator formed on the substrate to define the nanowires and depositing the semiconductor material in the trenches defining the nanowires;
- and
- wherein the fabricating of the side gate comprises etching the insulator to create a trench for the side gate and depositing the side gate in the trench for the side gate.
A quantum device comprising:
- a substrate and an insulator formed on the substrate;
- combinations of selective-area-grown semiconductor material along with regions of a superconducting material, forming a network of nanowires oriented in the plane of the substrate that is gateable to produce a Majorana-based topological qubit;
- and
- a side gate for controlling a topological segment of the Majorana-based topological qubit;
- wherein the selective-area-grown semiconductor material is buried in trenches in the insulator which define the nanowires, and wherein side gate is also buried in a trench in the insulator.
Dependencies are inferred from the claim text.