Semiconductor device and manufacturing method of semiconductor device
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChien-Min Lee, Shy-Jay Lin, Yen-Lin Huang, MingYuan Song, Tung Ying Lee
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Abstract
Semiconductor device includes pair of active devices, composite spin Hall electrode, and a magnetic tunnel junction. Composite spin Hall electrode is electrically connected to pair of active devices. Magnetic tunnel junction is disposed on opposite side of composite spin hall electrode with respect to pair of active devices. Spin Hall electrode includes pair of heavy metal layers, and spacer layer disposed in between pair of heavy metal layers. Pair of heavy metal layers is made of a heavy metal in a metastable state. Spacer layer comprises first material different from the pair of heavy metal layers.
Claims20
A semiconductor device, comprising:
- a pair of transistors on a semiconductor substrate;
- an interconnect structure over the pair of transistors, the interconnect structure comprising:
- metal lines and vias over and connected to the pair of transistors;
- a composite spin Hall electrode over the metal lines and vias, the composite spin Hall electrode being electrically connected to the pair of transistors by the metal lines and vias, the composite spin Hall electrode comprising:
- a first metal layer comprising a first heavy metal that includes a mixture of an α-β state;
- a first spacer layer comprising a first material different from the first metal layer;
- and
- a second metal layer over the first spacer layer, the second metal layer comprising the first heavy metal, wherein the first spacer layer is disposed between and in physical contact with the first metal layer and the second metal layer, and wherein the first spacer layer comprises an oxide;
- and
- a magnetic tunnel junction over the composite spin Hall electrode.
A memory device, comprising:
- a first memory cell over a substrate, the first memory cell comprising:
- a first transistor and a second transistor on the substrate;
- first conductive lines and vias over and electrically coupled to the first and second transistors;
- a composite spin Hall electrode over and electrically coupled to the first conductive lines and vias, the composite spin Hall electrode comprising a first tungsten-based layer and a second tungsten-based layer separated by a first spacer, the first tungsten-based layer comprising a first mixture of α-β-tungsten, the second tungsten-based layer comprising a second mixture of α-β-tungsten;
- a magnetic tunnel junction over the second tungsten-based layer;
- and
- second conductive lines and vias over and electrically coupled to the magnetic tunnel junction.
A method, comprising:
- forming transistors on a substrate;
- forming a composite spin Hall electrode over and electrically coupled to the transistors, and
- forming a magnetic tunnel junction over the composite spin Hall electrode, wherein forming the composite spin Hall electrode comprises:
- depositing a first layer of a first material, the first material being a Hall metal in a metastable state and capable of transforming to a stable state;
- depositing a second layer of a second material on the first layer of the first material, the second layer having a different composition than the first material;
- depositing a third layer of the first material in the metastable state on the second layer of the second material;
- and
- annealing the first layer, the second layer, and the third layer, and, after annealing, the first material in the first layer and the third layer includes a mixture of the metastable state and the stable state.
Dependencies are inferred from the claim text.