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US 11,706,998 B2Granted
Magnetic tunnel junction and magnetic memory device comprising the same
AssigneeSamsung Electronics Co., Ltd.
InventorsKwang Seok Kim, Young Man Jang, Ung Hwan Pi
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Abstract
In one embodiment, the magnetic memory device includes a free layer structure having a variable magnetization direction. The free layer structure includes a first free layer, the first free layer being a first Heusler alloy; a coupling layer on the first free layer, the coupling layer including a metal oxide layer; and a second free layer on the metal oxide layer, the second free layer being a second Heusler alloy, the second Heusler alloy being different from the first Heusler alloy.
Claims19
A magnetic memory device, comprising:
- a free layer structure having a variable magnetization direction, the free layer structure including,
- a first free layer, the first free layer including a first Heusler alloy having perpendicular magnetic anisotropy,
- a coupling layer on the first free layer, the coupling layer including a metal oxide layer, and
- a second free layer on the metal oxide layer, the second free layer including a second Heusler alloy comprising a material different from the first Heusler alloy and having perpendicular magnetic anisotropy;
- a pinned layer structure, the pinned layer structure having a fixed magnetization direction;
- and
- a tunnel barrier layer between the pinned layer structure and the free layer structure,
- wherein the metal oxide layer including at least one of magnesium aluminum oxide (MgAlO), hafnium oxide (HfO), tantalum oxide (Ta2O5), niobium oxide (Nb2O5), zirconium oxide (ZrO), and aluminum oxide (AlO),
- wherein the metal oxide layer induces interfacial perpendicular magnetic anisotropy at an interface with the first free layer.
6 more elements
A magnetic memory device, comprising:
- a pinned layer structure, the pinned layer structure having a fixed magnetization direction, the pinned layer structure including,
- a first pinned layer,
- a non-magnetic layer, and
- a second pinned layer, the first pinned layer and the second pinned layer having anti-parallel magnetization directions;
- a free layer structure having a variable magnetization direction, the free layer structure including,
- a first free layer, the first free layer including a first Heusler alloy, and having a first saturation magnetization,
- a metal oxide layer on the first free layer, and
- a second free layer on the metal oxide layer, the second free layer including a second Heusler alloy having a second saturation magnetization, and the second saturation magnetization being different from the first saturation magnetization;
- and
- a tunnel barrier layer between the pinned layer structure and the free layer structure,
- wherein the metal oxide layer includes at least one of magnesium aluminum oxide (MgAlO), hafnium oxide (HfO), tantalum oxide (Ta2O5), niobium oxide (Nb2O5), zirconium oxide (ZrO), and aluminum oxide (AlO), and
- wherein the metal oxide layer induces interfacial perpendicular magnetic anisotropy at an interface with the first free layer.
9 more elements
Dependencies are inferred from the claim text.