Electronic device and method for fabricating the same
AssigneeSK hynix Inc.
InventorGayoung Ha
Life of this patent
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Abstract
An electronic device may include a semiconductor memory, and the semiconductor memory may include a substrate; a variable resistance element formed over the substrate and exhibiting different resistance values representing different digital information, the variable resistance element including a free layer having a variable magnetization direction, a pinned layer having a fixed magnetization direction and a tunnel barrier layer interposed between the free layer and the pinned layer; and a blocking layer disposed on at least sidewalls of the variable resistance element, wherein the blocking layer may include a layer that is substantially free of nitrogen, oxygen or a combination thereof.
Claims10
A method for fabricating an electronic device, the method comprising:
- forming a variable resistance element over a substrate;
- and
- forming a blocking layer on at least sidewalls of the variable resistance element,
- wherein the blocking layer includes a layer that is substantially free of nitrogen, oxygen or a combination thereof, and
- wherein the blocking layer is structured to block diffusion of gases including O2, H2O, N2 or a combination thereof to the variable resistance element.
A method for fabricating an electronic device, the method comprising:
- forming a variable resistance element over a substrate;
- forming a blocking layer on at least sidewalls of the variable resistance element;
- and
- forming a protective layer on at least sidewalls of the blocking layer,
- wherein the blocking layer includes a layer that is substantially free of nitrogen, oxygen or a combination thereof, and
- wherein the blocking layer is structured to block diffusion of gases including O2, H2O, N2 or a combination thereof to the variable resistance element.
Dependencies are inferred from the claim text.