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US 11,706,996 B2Granted
Magnetoresistive random access memory
AssigneeUnited Microelectronics Corp.
InventorsHui-Lin Wang, Yu-Ping Wang, Chen-Yi Weng, Chin-Yang Hsieh, Si-Han Tsai, Che-Wei Chang, Jing-Yin Jhang
Life of this patent
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Abstract
A semiconductor device includes: a substrate comprising a magnetic tunneling junction (MTJ) region and a logic region; a first MTJ on the MTJ region; a first metal interconnection on the logic region; and a cap layer extending from a sidewall of the first MTJ to a sidewall of the first metal interconnection. Preferably, the cap layer on the MTJ region and the cap layer on the logic region comprise different thicknesses.
Claims10
A semiconductor device, comprising:
- a substrate comprising a magnetic tunneling junction (MTJ) region and a logic region;
- a first MTJ on the MTJ region;
- a first metal interconnection on the logic region;
- a cap layer extending from a sidewall of the first MTJ to a sidewall of the first metal interconnection, wherein the cap layer on the MTJ region and the cap layer on the logic region comprise different thicknesses;
- and
- a second inter-metal dielectric (IMD) layer around the cap layer, wherein top surfaces of the cap layer and the second IMD layer are coplanar.
3 more elements
Dependencies are inferred from the claim text.