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US 11,706,995 B2Granted
Semiconductor device
AssigneeUnited Microelectronics Corp.
InventorsChih-Wei Kuo, Chia-Chang Hsu
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Abstract
A semiconductor device includes an array region defined on a substrate, a ring of dummy pattern surrounding the array region, and a gap between the array region and the ring of dummy pattern. Preferably, the ring of dummy pattern further includes a ring of magnetic tunneling junction (MTJ) pattern surrounding the array region and a ring of metal interconnect pattern overlapping the ring of MTJ and surrounding the array region.
Claims6
A semiconductor device, comprising:
- a substrate having an array region defined thereon;
- a ring of dummy pattern surrounding the array region, wherein the ring of dummy pattern comprises:
- a ring of magnetic tunneling junction (MTJ) pattern surrounding the array region, wherein the ring of MTJ pattern is made of a single MTJ;
- and
- a ring of metal interconnect pattern overlapping the ring of MTJ and surrounding the array region.
2 more elements
Dependencies are inferred from the claim text.