Electric field controlled magnetoresistive random-access memory

An electric field-controlled magnetoresistive random-access memory (MRAM) comprising at least one one-bit memory cell having a heterogeneous tunnel junction structure composed of a first tunnel junction and a second tunnel junction, wherein:

• the first tunnel junction comprises:
• a first magnetic layer having a fixed magnetization direction;
• a second magnetic layer having a variable magnetization direction that changes according to spin transfer torque when a voltage is applied to the first tunnel junction, thereby providing magnetic information;
• and
• a first insulating layer provided between the first magnetic layer and the second magnetic layer and serving as a tunnel barrier;
• the second tunnel junction comprises:
• the second magnetic layer;
• and
• a second insulating layer provided on one surface of the second magnetic layer;
• the first and second tunnel junctions share the second magnetic layer;
• the second tunnel junction has only one magnetic layer being the second magnetic layer;
• the one-bit memory cell has only two magnetic layers being the first magnetic layer and the second magnetic layer, and
• the second insulating layer is formed of a ferroelectric material configured to undergo spontaneous electric polarization when an electric field is applied thereto to control an electric field applied to the second magnetic layer and induce a change in magnetic anisotropy in the second magnetic layer.