Photoelectric conversion element and photoelectric conversion module

A photoelectric conversion element comprising:

• a substrate;
• a first electrode;
• a hole blocking layer;
• a photoelectric conversion layer;
• and
• a second electrode,
• wherein the photoelectric conversion layer includes an electron-transporting layer and a hole-transporting layer,
• wherein in an edge part of the photoelectric conversion element, and in a direction orthogonal to a stacking direction of the substrate, the first electrode, the hole blocking layer, the photoelectric conversion layer, and the second electrode,
• an outermost end of the electron-transporting layer is at a side of an outermost end of the first electrode closer to a center of the photoelectric conversion element,
• an outermost end of the hole-transporting layer is at a side of an outermost end of the second electrode away from the center of the photoelectric conversion element, and
• the outermost end of the second electrode is at a side of the outermost end of the electron-transporting layer closer to the center of the photoelectric conversion element, and
• wherein a height of an edge region including the outermost end of the first electrode in the stacking direction is smaller than a total of an average thickness of the first electrode, an average thickness of the hole blocking layer, and an average thickness of the electron-transporting layer
• where the height is a maximum distance in the stacking direction between a surface of the substrate at a side of the first electrode in the edge part of the photoelectric conversion element and a portion of the first electrode closest to the outermost end of the second electrode in the edge part of the photoelectric conversion element.