Semiconductor memory device and fabrication method thereof
AssigneeUnited Microelectronics Corp.
InventorsWen-Hsin Hsu, Ko-Chi Chen, Tzu-Yun Chang, Chung-Tse Chen
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Abstract
A semiconductor memory device includes a substrate, a dielectric layer on the substrate, and a contact plug in the dielectric layer. An upper portion of the contact plug protrudes from a top surface of the dielectric layer. The upper portion of the contact plug acts as a first electrode. A buffer layer is disposed on the dielectric layer and beside the upper portion of the contact plug. A resistive-switching layer is disposed beside the buffer layer. A second electrode is disposed beside the resistive-switching layer.
Claims20
A semiconductor memory device, comprising:
- a substrate;
- a dielectric layer on the substrate;
- a contact plug in the dielectric layer, wherein an upper portion of the contact plug protrudes from a top surface of the dielectric layer, wherein the upper portion of the contact plug acts as a first electrode;
- a buffer layer on the dielectric layer and beside the upper portion of the contact plug;
- a resistive-switching layer beside the buffer layer;
- and
- a second electrode beside the resistive-switching layer.
A memory layout, comprising:
- a transistor comprising a source doped region and a drain doped region;
- a contact plug on the drain doped region, wherein the contact plug acts as a first electrode;
- a buffer layer surrounding the contact plug;
- a resistive-switching layer surrounding the buffer layer;
- and
- a second electrode beside the resistive-switching layer.
A method for forming a semiconductor memory device, comprising:
- providing a substrate;
- forming a dielectric layer on the substrate;
- forming a contact plug in the dielectric layer, wherein an upper portion of the contact plug protrudes from a top surface of the dielectric layer, wherein the upper portion of the contact plug acts as a first electrode;
- forming a buffer layer on the dielectric layer and beside the upper portion of the contact plug;
- forming a resistive-switching layer beside the buffer layer;
- and
- forming a second electrode beside the resistive-switching layer.
Dependencies are inferred from the claim text.