1T1R resistive random access memory, and manufacturing method thereof, transistor and device

A 1T1R resistive random access memory, comprising:

• a memory cell array composed of multiple 1T1R resistive random access memory cells, each 1T1R resistive random access memory cell comprising a transistor and a resistance switching device (30);
• wherein
• the transistor comprises a channel layer (201), a gate layer (204) insulated from the channel layer (201), and a drain layer (203) and a source layer (202) that are disposed on the channel layer (201), wherein the drain layer (203) and the source layer (202) are vertically distributed on the channel layer (201);
• the resistance switching device (30) is disposed near the drain layer (203), and two ends of the resistance switching device (30) are used to connect to the drain layer (203) and a bit line, respectively, and the gate layer (204) is used to electrically connect to a word line, and the source layer (202) is used to connect to a source line;
• the transistor further comprising:
• a mask layer (207), wherein the mask layer (207) covers at least the source layer (202) or covers at least the drain layer (203).