Semiconductor device and method for manufacturing the same
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsTzu-Yu Chen, Sheng-Hung Shih, Fu-Chen Chang, Kuo-Chi Tu, Wen-Ting Chu
Life of this patent
Estimating the term…
Abstract
A semiconductor device includes a bottom electrode, a top electrode, a sidewall spacer, and a data storage element. The sidewall spacer is disposed aside the top electrode. The data storage element is located between the bottom electrode and the top electrode, and includes a ferroelectric material. The data storage element has a peripheral region which is disposed beneath the sidewall spacer and which has at least 60% of ferroelectric phase. A method for manufacturing the semiconductor device and a method for transforming a non-ferroelectric phase of a ferroelectric material to a ferroelectric phase are also disclosed.
Claims20
A method for manufacturing a ferroelectric memory cell, comprising:
- forming a ferroelectric layer which includes a ferroelectric material;
- forming a top electrode layer on the ferroelectric layer;
- patterning the top electrode layer to form a top electrode;
- patterning the ferroelectric layer to form a data storage element;
- forming a sidewall spacer aside the top electrode such that the data storage element has a peripheral region beneath the sidewall spacer;
- and
- treating the ferroelectric material using a gas plasma such that the peripheral region of the data storage element has at least 60% of ferroelectric phase, to form the ferroelectric memory cell.
A method for manufacturing a ferroelectric memory cell, comprising:
- forming a bottom electrode;
- patterning a ferroelectric layer, which includes a ferroelectric material, using a first etching process so as to form a data storage element on the bottom electrode, the data storage element including a main region and two peripheral regions that are respectively at two opposite sides of the main region;
- patterning a top electrode layer using a second etching process so as to form a top electrode on the main region of the data storage element opposite to the bottom electrode;
- performing a gas plasma treatment to transform a non-ferroelectric phase in the ferroelectric material included in the data storage element, which is generated during at least one of the first and second etching processes, to a ferroelectric phase such that each of the peripheral regions of the data storage element has at least 60% of ferroelectric phase, to form the ferroelectric memory cell.
A method for manufacturing a ferroelectric memory cell, comprising:
- forming a ferroelectric layer which includes a ferroelectric material;
- forming a top electrode layer on the ferroelectric layer;
- patterning the top electrode layer to form a top electrode on the ferroelectric layer;
- forming two sidewall spacers on the ferroelectric layer and at two opposite sides of the top electrode;
- patterning the ferroelectric layer to form a data storage element which has a main region disposed beneath the top electrode and two peripheral regions respectively disposed beneath the sidewall spacers;
- performing a first gas plasma treatment after patterning the top electrode layer and before patterning the ferroelectric layer, and performing a second gas plasma treatment after patterning the ferroelectric layer so as to permit each of the peripheral region of the data storage element to have at least 60% of ferroelectric phase, to form the ferroelectric memory cell.
Dependencies are inferred from the claim text.