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US 11,706,926 B2Granted
Method of manufacturing a semiconductor memory device
AssigneeSK hynix Inc.
InventorJae Taek Kim
Life of this patent
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Abstract
A semiconductor memory device, with which a manufacturing method is associated, includes a substrate. The semiconductor memory device also includes a source structure disposed on a first region of the substrate, memory cell strings connected to the source structure, and a capacitor structure disposed on a second region of the substrate. The capacitor structure is spaced apart from the source structure in a horizontal direction.
Claims8
A method of manufacturing a semiconductor memory device, the method comprising:
- forming a first stack structure by sequentially stacking a first doped semiconductor layer, a sacrificial layer, and a second doped semiconductor layer on a substrate;
- forming a separation layer that separates the first stack structure into a preliminary source structure on a first region of the substrate and a capacitor structure on a second region of the substrate;
- forming a trench that exposes the sacrificial layer of the preliminary source structure in the first region;
- and
- replacing the sacrificial layer of the preliminary source structure with a contact source layer through the trench, wherein the sacrificial layer of the capacitor structure is maintained.
2 more elements
Dependencies are inferred from the claim text.