Integrated assemblies and methods of forming integrated assemblies
AssigneeMicron Technology, Inc.
InventorsRamey M. Abdelrahaman, Jeslin J. Wu, Chandra Tiwari, Kunal Shrotri, Swapnil Lengade
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Abstract
Some embodiments include an integrated assembly having a vertical stack of alternating insulative levels and conductive levels. The insulative levels have a same primary composition as one another. At least one of the insulative levels is compositionally different relative to others of the insulative levels due to said at least one of the insulative levels including dopant dispersed within the primary composition. An opening extends vertically through the stack. Some embodiments include methods of forming integrated assemblies.
Claims10
A method of forming an integrated assembly, comprising:
- forming a stack of alternating first and second levels;
- the first levels comprising first material having a first primary composition, and the second levels comprising second material having a second primary composition;
- at least one of the first levels being compositionally different relative to others of the first levels due to said at least one of the first levels comprising first dopant dispersed within the first primary composition;
- at least one of the second levels being compositionally different relative to others of the second levels due to said at least one of the second levels comprising second dopant dispersed within the second primary composition;
- forming an opening to extend through the first and second levels of the stack;
- forming charge-storage material, tunneling material and channel material within the opening;
- removing the second material to leave voids between the first levels;
- and
- forming conductive structures within the voids.
Dependencies are inferred from the claim text.