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US 11,706,922 B2Granted
Method for manufacturing a semiconductor device having a channel layer with an impurity region
AssigneeSK hynix Inc.
InventorsIn Su Park, Do Yeon Kim, Ki Hong Lee
Life of this patent
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Abstract
A semiconductor device includes a core insulating layer extending in a first direction, an etch stop layer disposed on the core insulating layer, a channel layer extending along a sidewall of the core insulating layer and a sidewall of the etch stop layer, conductive patterns each surrounding the channel layer and stacked to be spaced apart from each other in the first direction, and an impurity region formed in an upper end of the channel layer.
Claims11
A method of manufacturing a semiconductor device, the method comprising:
- forming a stack structure;
- forming a hole extending in a stacking direction of the stack structure;
- forming a channel layer on a sidewall of the hole;
- filling a central region of the hole which is opened by the channel layer with a core insulating layer;
- injecting an impurity into the channel layer to form an impurity region;
- forming a recessed region by recessing a portion of the core insulating layer surrounded by the impurity region, wherein a bottom surface of the recessed region is disposed at a higher level than a lowermost part of the impurity region and at a lower level than an uppermost part of the impurity region;
- and
- filling the recessed region of the core insulating layer with an etch stop layer.
5 more elements
Dependencies are inferred from the claim text.