Memory arrays comprising strings of memory cells and methods used in forming a memory array comprising strings of memory cells

A method used in forming a memory array comprising strings of memory cells, comprising:

• forming a conductor tier comprising conductor material on a substrate;
• forming a stack comprising vertically-alternating first tiers and second tiers, the stack comprising laterally-spaced memory-block regions, the memory-block regions being longitudinally elongated and oriented along a first direction, channel-material strings extending through the first tiers and the second tiers, material of the first tiers being of different composition from material of the second tiers;
• forming conducting material in a lowest of the first tiers, the conducting material comprising a seam in and longitudinally-along opposing sides of individual of the memory-block regions in the lowest first tier;
• and
• penetrating the seam with a fluid that forms intermediate material in the seam longitudinally-along the opposing sides of the individual memory-block regions in the lowest first tier and that comprises a different composition from that of the conducting material, the intermediate material being formed completely laterally across the individual memory-block regions in at least one vertical cross-section that is orthogonal to the first direction.

A memory array comprising strings of memory cells, comprising:

• laterally-spaced memory blocks individually comprising a vertical stack comprising alternating insulative tiers and conductive tiers, channel-material strings of memory cells extending through the insulative tiers and the conductive tiers;
• one of the conductive tiers comprising upper conducting material and lower conducting material, the upper and lower conducting materials comprising a seam there-between in and longitudinally-along opposing sides of individual of the memory blocks in the one conductive tier, the upper conducting material and the lower conducting material being directly electrically coupled together vertically through the seam;
• and
• intermediate material in the seam longitudinally-along the opposing sides of the individual memory blocks and that comprises a different composition from that of the upper and lower conducting materials, the intermediate material extending completely across the individual memory blocks in at least one vertical cross-section orthogonal to a longitudinal orientation of the individual memory blocks.

A memory array comprising strings of memory cells, comprising:

• a conductor tier comprising conductor material;
• laterally-spaced memory blocks individually comprising a vertical stack comprising alternating insulative tiers and conductive tiers, channel-material strings of memory cells extending through the insulative tiers and the conductive tiers, conducting material of a lowest of the conductive tiers directly electrically coupling together the channel material of individual of the channel-material strings and the conductor material of the conductor tier;
• the lowest conductive tier comprising upper conducting material and lower conducting material, the upper and lower conducting materials comprising a seam there-between in and longitudinally-along opposing sides of individual of the memory blocks in the lowest conductive tier, the upper conducting material and the lower conducting material being directly electrically coupled together vertically through the seam;
• intermediate material in the seam longitudinally-along the opposing sides of the individual memory-blocks and that comprises a different composition from that of the upper and lower conducting materials;
• and
• the upper conducting material and the lower conducting material are directly electrically coupled together vertically through a portion of the seam that is laterally displaced from the intermediate material.

A memory array comprising strings of memory cells, comprising:

• laterally-spaced memory blocks individually comprising a vertical stack comprising alternating insulative tiers and conductive tiers, channel-material strings of memory cells extending through the insulative tiers and the conductive tiers;
• one of the conductive tiers comprising upper conducting material and lower conducting material, the upper and lower conducting materials comprising a seam there-between in and longitudinally-along opposing sides of individual of the memory blocks in the one conductive tier, the upper conducting material and the lower conducting material being directly electrically coupled together vertically through the seam;
• intermediate material in the seam longitudinally-along the opposing sides of the individual memory blocks and that comprises a different composition from that of the upper and lower conducting materials;
• and
• the upper conducting material and the lower conducting material are directly electrically coupled together vertically through a portion of the seam that is laterally displaced from the intermediate material.

A method used in forming a memory array comprising strings of memory cells, comprising:

• forming a conductor tier comprising conductor material on a substrate;
• forming a stack comprising vertically-alternating first tiers and second tiers, the stack comprising laterally-spaced memory-block regions, channel-material strings extending through the first tiers and the second tiers, material of the first tiers being of different composition from material of the second tiers;
• forming conducting material in a lowest of the first tiers, the conducting material comprising a seam in and longitudinally-along opposing sides of individual of the memory-block regions in the lowest first tier;
• one of the second tiers being immediately-above the lowest first tier;
• the one second tier comprising:
• an upper first insulative material;
• a lower material;
• and
• an intermediate material vertically-between the upper first insulative material and the lower material, the intermediate material being of different composition from that of the lower material and from that of the upper insulative material;
• and
• penetrating the seam with a fluid that forms intermediate material in the seam longitudinally-along the opposing sides of the individual memory-block regions in the lowest first tier and that comprises a different composition from that of the conducting material.