Ribbon bond solution for reducing thermal stress on an intermittently operable chipset controlling RF application for cooking

Power amplifier electronics for controlling application of radio frequency (RF) energy generated using solid state electronic components into a cooking chamber in association with a learning procedure, the power amplifier electronics being configured to control application of RF energy in cycles between high and low powers to determine an efficient combination of frequency and phase for application of the RF energy into the cooking chamber when the learning procedure is executed, the power amplifier electronics comprising:

• a semiconductor die on which one or more RF power transistors are fabricated;
• an output matching network configured to provide impedance matching between the semiconductor die and external components operably coupled to an output tab;
• and a bonding ribbon that is bonded at terminal ends thereof to operably couple the one or more RF power transistors of the semiconductor die to the output matching network, wherein the bonding ribbon has a width of greater than about five times a thickness of the bonding ribbon.

A method of coupling components in power amplifier electronics, the method comprising:

• providing a semiconductor die on which one or more RF power transistors are fabricated within a package of power amplifier electronics configured to control application of radio frequency (RF) energy generated using solid state electronic components into a cooking chamber in association with a learning procedure, the power amplifier electronics being configured to control application of RF energy in cycles between high and low powers to determine an efficient combination of frequency and phase for application of the RF energy into the cooking chamber when the learning procedure is executed;
• providing an output matching network configured to provide impedance matching between the semiconductor die and external components operably coupled to an output tab of the package proximate to the semiconductor die;
• and operably coupling the one or more RF power transistors of the semiconductor die to the output matching network via a bonding ribbon, the bonding ribbon having terminal ends thereof bonded to a respective one of the one or more RF power transistors of the semiconductor die and the output matching network, wherein the bonding ribbon has a width of greater than about five times a thickness of the bonding ribbon.