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US 11,705,300 B2Granted
Method and device for implanting ions in wafers
AssigneeMi2-Factory GmbH
InventorsFlorian Krippendorf, Constantin Csato
Life of this patent
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Abstract
A method comprising the irradiation of a wafer by an ion beam that passes through an implantation filter. The wafer is heated to a temperature of more than 200° C. The wafer is a semiconductor wafer including SiC, and the ion beam includes aluminum ions.
Claims3
A method for implanting ions in wafers, comprising:
- performing implantation of ions in a wafer by irradiating the wafer with an ion beam passing through an implantation filter, which is an energy filter with a structured filter membrane;
- wherein the wafer is heated to a temperature of more than 200° C. during the implantation.
Dependencies are inferred from the claim text.