Apparatus for inspecting semiconductor device and method for inspecting semiconductor device

A method for inspecting a semiconductor device, comprising:

• making monochromatic X-rays obliquely incident on an object at a predetermined angle of incidence, the object being a semiconductor device, the semiconductor device including a semiconductor substrate, a predetermined pattern being formed on a surface of the semiconductor substrate;
• detecting observed X-rays observed from the object when the monochromatic X-rays are made obliquely incident using a plurality of two-dimensionally disposed photodetection elements;
• and
• generating X-ray diffraction images obtained by photoelectrically converting the observed X-rays, wherein
• the angle of incidence is variable, a detection angle of the observed X-rays is changed in accordance with the angle of incidence every time the angle of incidence is changed, one of the X-ray diffraction images corresponding to the angle of incidence is generated every time the angle of incidence is changed, an X-ray diffraction image in which intensity of the observed X-rays becomes maximum is further identified as a maximum intensity image from among the X-ray diffraction images for each of pixels constituting the X-ray diffraction image, and a stress distribution of the object is estimated based on a condition of each of the pixels when one of the X-ray diffraction images including at least the maximum intensity image being generated.

A method for inspecting a semiconductor device, comprising:

• making monochromatic X-rays obliquely incident on an object at a predetermined angle of incidence, the object being a semiconductor device, the semiconductor device including a semiconductor substrate, a predetermined pattern being formed on a surface of the semiconductor substrate;
• detecting observed X-rays observed from the object when the monochromatic X-rays are made obliquely incident using a photodetection element;
• and
• generating X-ray diffraction images obtained by photoelectrically converting the observed X-rays, wherein
• the angle of incidence is variable, a detection angle of the observed X-rays is changed in accordance with the angle of incidence every time the angle of incidence is changed, one of the X-ray diffraction images corresponding to the angle of incidence is generated every time the angle of incidence is changed, an X-ray diffraction image in which intensity of the observed X-rays becomes maximum is further identified as a maximum intensity image from among the X-ray diffraction images obtained, and stress applied to the object is estimated by comparing one of the X-ray diffraction images including at least the maximum intensity image with an X-ray diffraction measurement result obtained from a standard sample by an advance inspection.