Method for forming a film of an oxide of In, Ga, and Zn
AssigneesImec Vzw, Applied Materials, Inc.
InventorsHendrik F. W. Dekkers, Jose Ignacio del Agua Borniquel
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Abstract
A method for forming a film of an oxide of In, Ga, and Zn, having a spinel crystalline phase comprises providing a substrate in a chamber; providing a sputtering target in said chamber, the target comprising an oxide of In, Ga, and Zn, wherein: In, Ga, and Zn represent together at least 95 at % of the elements other than oxygen, In represents from 0.6 to 44 at % of In, Ga, and Zn, Ga represents from 22 to 66 at % of In, Ga, and Zn, and Zn represents from 20 to 46 at % of In, Ga, and Zn; and forming a film on the substrate, the substrate being at a temperature of from 125° C. to 250° C., by sputtering the target with a sputtering gas comprising O2, the sputtering being performed at a sputtering power of at least 200 W.
Claims16
A method of forming a film of an oxide of In, Ga, and Zn, having a spinel crystalline phase, the method comprising:
- providing a substrate in a chamber;
- providing a sputtering target in the chamber, the sputtering target comprising an oxide of In, Ga, and Zn, wherein:
- In, Ga, and Zn represent together at least 95 at % of elements other than oxygen in the sputtering target,
- In represents from 0.6 to 44 at % of In, Ga, and Zn in the sputtering target, an atomic percent ratio of In to Ga in the sputtering target is from 0.51 to 1.96,
- Ga represents from 22 to 66 at % of In, Ga, and Zn in the sputtering target, and
- Zn represents from 20 to 46 at % of In, Ga, and Zn in the sputtering target;
- and
- forming a film on the substrate, the substrate being at a temperature of from 125° C. to 250° C., by pulsed DC reactive magnetron sputtering the sputtering target with a sputtering gas comprising O2, the sputtering being performed at a sputtering power of at least 300 W and at a frequency of from 10 kHz to 1 MHz, wherein the formed film of the oxide of In, Ga, and Zn has the spinel crystalline phase.
Dependencies are inferred from the claim text.