Method for controlling the forming voltage in resistive random access memory devices

A method of forming a resistive random access memory (ReRAM) device, the method comprising:

• depositing a metal oxide dielectric film directly on first electrode film, the metal oxide dielectric film containing intrinsic defects that include oxygen vacancies;
• forming a plasma-excited treatment gas containing H2 gas, wherein the forming includes exciting the treatment gas using a microwave plasma source;
• exposing the metal oxide dielectric film to the plasma-excited treatment gas to create additional defects in the metal oxide dielectric film without substantially changing a physical thickness of the metal oxide dielectric film, wherein the additional defects lower the forming voltage needed for generating an electrically conducting filament across the metal oxide dielectric film;
• thereafter, depositing an additional metal oxide dielectric film on the metal oxide dielectric film;
• and
• forming a second electrode film on the additional metal oxide dielectric film.

A resistive random access memory (ReRAM) device, comprising:

• a dielectric film in direct contact with a first electrode film, the dielectric film containing intrinsic defects, and additional defects created by exposing the dielectric film to a plasma-excited treatment gas containing H2 gas, wherein the additional defects lower the forming voltage needed for generating an electrically conducting filament across the dielectric film;
• an additional dielectric film on the dielectric film;
• and
• a second electrode film on the additional dielectric film.