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US 11,700,776 B2Granted
Quantum dot devices with fins
AssigneeIntel Corporation
InventorsJeanette M. Roberts, Ravi Pillarisetty, David J. Michalak, Zachary R. Yoscovits, James S. Clarke, Van H. Le
Life of this patent
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Abstract
Disclosed herein are quantum dot devices, as well as related computing devices and methods. For example, in some embodiments, a quantum dot device may include: a substrate and a quantum well stack disposed on the substrate. The quantum well stack may include a quantum well layer and a back gate, and the back gate may be disposed between the quantum well layer and the substrate.
Claims29
A quantum dot device, comprising:
- a base;
- a first fin extending away from the base, wherein the first fin includes a first quantum well layer;
- a plurality of first gates over the first fin, wherein the plurality of first gates extends away from the first fin in a direction perpendicular to a longitudinal axis of the first fin;
- a second fin extending away from the base, wherein the second fin includes a second quantum well layer and wherein projections of the first and second fins onto a plane parallel to the base are parallel;
- and
- a plurality of second gates over the second fin, wherein the plurality of second gates extends away from the second fin in a direction perpendicular to a longitudinal axis of the second fin,
- wherein:
- the first gates are arranged in an arrangement on the first fin, and individual ones of the first gates correspond to individual ones of the second gates such that the second gates are arranged in an analogous arrangement on the second fin.
5 more elements
A quantum dot device, comprising:
- a base;
- a first fin extending away from the base and including a first quantum well layer;
- a second fin extending away from the base and including a second quantum well layer;
- a plurality of first gates over the first fin, wherein the plurality of first gates extends away from the first fin in a direction perpendicular to a longitudinal axis of the first fin;
- and
- a plurality of second gates over the second fin, wherein the plurality of second gates extends away from the second fin in a direction perpendicular to a longitudinal axis of the second fin,
- wherein:
- projections of the first and second fins onto a plane parallel to the base are parallel,
- an insulating material is between the first fin and the second fin, and
- at least one of the first gates does not contact sidewalls of the first fin.
7 more elements
A quantum dot device, comprising:
- a base;
- a first fin extending away from the base, wherein the first fin includes a first quantum well layer;
- a second fin extending away from the base, wherein the second fin includes a second quantum well layer;
- a plurality of first gate lines over different portions of a top surface of the first fin, wherein the first gate lines are parallel to one another and bottom surfaces of the first gate lines are parallel to an upper surface of the base, and each of the first gate lines extends away from the first fin in a direction perpendicular to a longitudinal axis of the first fin;
- and
- a plurality of second gate lines over different portions of a top surface of the second fin, wherein the second gate lines are parallel to one another and bottom surfaces of the second gate lines are parallel to the upper surface of the base, and each of the second gate lines extends away from the second fin in a direction perpendicular to a longitudinal axis of the second fin,
- wherein:
- the longitudinal axis of the first fin is parallel to the longitudinal axis of the second fin,
- the plurality of first gate lines includes at least three of the first gate lines,
- the plurality of second gate lines includes at least three of the second gate lines,
- a first one of the at least three of the first gate lines and a first one of the at least three of the second gate lines are along a first line that is parallel to the base,
- a second one of the at least three of the first gate lines and a second one of the at least three of the second gate lines are along a second line that is parallel to the base and parallel to the first line, and
- a third one of the at least three of the first gate lines and a third one of the at least three of the second gate lines are along a third line that is parallel to the base and parallel to the second line.
10 more elements
A quantum dot device, comprising:
- a base;
- a first fin extending away from the base and including a first quantum well layer;
- a second fin extending away from the base and including a second quantum well layer;
- a plurality of first gates over the first fin, wherein the plurality of first gates extends away from the first fin in a direction perpendicular to a longitudinal axis of the first fin;
- a plurality of second gates over the second fin, wherein the plurality of second gates extends away from the second fin in a direction perpendicular to a longitudinal axis of the second fin;
- and
- an insulating material in contact with sidewalls of the first fin, wherein a dimension of the insulating material in a direction away from the sidewalls of the first fin is at least 100 nanometers.
4 more elements
Dependencies are inferred from the claim text.