Doped emissive layer for patterned QDS light emitting diodes (QLEDS) with balanced transport of charges
AssigneeSharp Kabushiki Kaisha
InventorEnrico Angioni
Life of this patent
Estimating the term…
Loading patent…
AssigneeSharp Kabushiki Kaisha
InventorEnrico Angioni
Estimating the term…
A light-emitting device includes a substrate, an anode, a cathode, an emissive layer between the anode and the cathode, the emissive layer comprising quantum dots having ligands, a cross-linked matrix comprising a cross-linkable charge transport material other than the ligands, and another charge transport material, where the quantum dots are dispersed in the cross-linked matrix, and the another charge transport material alters mobility of charge carriers of the emissive layer. The another charge transport material is not cross-linked with the cross-linked charge transport material in the cross-linked matrix. The cross-linked charge transport material is a cross-linkable hole transporting material. The another charge transporting material includes a hole transporting material. The hole transporting material has a highest occupied molecular orbital or valence energy level between those of the cross-linked hole transporting material and the quantum dots.
A light-emitting device, comprising:
A light-emitting device, comprising:
A light emitting structure, comprising:
Dependencies are inferred from the claim text.