Three dimensional memory and methods of forming the same
AssigneeMicron Technology, Inc.
InventorsSanh D. Tang, John K. Zahurak
Life of this patent
Estimating the term…
Abstract
Some embodiments include a memory device and methods of forming the memory device. One such memory device includes a first group of memory cells, each of the memory cells of the first group being formed in a cavity of a first control gate located in one device level of the memory device. The memory device also includes a second group of memory cells, each of the memory cells of the second group being formed in a cavity of a second control gate located in another device level of the memory device. Additional apparatus and methods are described.
Claims20
A memory device comprising:
- a first memory cell including a first memory element located in a first device level of the memory device;
- a second memory cell including a second memory element located in a second device level of the memory device;
- a first control gate formed in the first device level to control access to the first memory cell;
- a second control gate formed in the second device level to control access to the second memory cells;
- a conductive channel extending through the first and second levels of the memory device, wherein the first memory element is between a first portion the conductive channel and the first control gate, and the second memory element is between a second portion the conductive channel and the first control gate;
- and
- a dielectric material electrically separating the first memory element from the second memory element.
A memory device comprising:
- a first memory cell including a first memory element located in a first device level of the memory device;
- a second memory cell including a second memory element located in a second device level of the memory device, each of the first and second memory elements having a ring shape;
- a first control gate formed in the first device level to control access to the first memory cell;
- a second control gate formed in the second device level to control access to the second memory cells;
- a conductive channel extending through the first and second memory elements;
- and
- a dielectric material electrically separating the first memory element from the second memory element.
A memory device comprising:
- a first conductive region including a protrusion portion;
- a second conductive region;
- first memory cell including a first memory element located in a first device level of the memory device;
- a second memory cell including a second memory element located in a second device level of the memory device, the first and second memory cells located between the first and second conductive regions;
- a first control gate formed in the first device level to control access to the first memory cell;
- a second control gate formed in the second device level to control access to the second memory cells;
- and
- a conductive channel extending through the first and second levels of the memory device and coupled between the second conductive region and the protrusion portion of the first conductive region.
Dependencies are inferred from the claim text.