Microelectronic device structures including tiered stacks comprising staggered block structures separated by slot structures, and related electronic systems and methods

A microelectronic device, comprising:

• a slot structure extending through a stack structure comprising tiers of alternating conductive structures and insulative structures, the slot structure comprising an insulative material;
• a first block structure of the stack structure on a first side of the slot structure, the first block structure comprising first stair step structures and crest regions;
• a second block structure of the stack structure on a second, opposite side of the slot structure, the second block structure comprising second stair step structures horizontally offset from the first stair step structures of the first block structure;
• and
• support pillar structures within horizontal boundaries of the first stair step structures and the crest regions, a spacing between the support pillar structures within the first stair step structures greater than a spacing between the support pillar structures within the crest regions.

A method of forming a microelectronic device, the method comprising:

• forming a stack structure comprising tiers of alternating levels of insulative structures and additional insulative structures;
• forming stair step structures within the stack structure, the stair step structures spaced from each other by crest regions;
• forming support pillar structures comprising an insulative material extending through the stack structure and within horizontal boundaries of stair step structures and horizontal boundaries of the crest regions;
• and
• forming a slot exhibiting a non-linear shape through the stack structure, the slot separating the stack structure into at least a first block structure comprising a first group of the stair step structures and a first group of the crest regions and a second block structure comprising a second group of the stair step structures and a second group of the crest regions, the stair step structure of the first group of stair step structures horizontally offset from the stair step structures of the second group of stair step structures, a spacing between support pillar structures within the first group of the stair step structures greater than a spacing between support pillar structures within the first group of the crest regions.

An electronic system, comprising:

• an input device;
• an output device;
• a processor device operably coupled to the input device and the output device;
• and
• a memory device operably coupled to the processor device and comprising at least one microelectronic device structure, the at least one microelectronic device structure comprising:
• a stack structure comprising block structures exhibiting a staggered layout, the block structures comprising:
• a first block structure;
• a second block structure directly horizontally neighboring the first block structure in a first horizontal direction;
• and
• a third block structure directly horizontally neighboring the second block structure in the first horizontal direction, the second block structure directly between the first block structure and the third block structure without intervening block structures, the second block structure including stair step structures horizontally offset in a second horizontal direction from stair step structures of the first block structure and stair step structures of the third block structure;
• and
• slot structures exhibiting a non-linear shape and extending through the stack structure and dividing the stack structure into the block structures.