Semiconductor device
AssigneeSamsung Electronics Co., Ltd.
InventorsJin Sub Kim, Jun Kwan Kim, Woo Choel Noh, Kyoung-Hee Kim, Ik Soo Kim, Yong Jin Shin
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Abstract
A semiconductor device includes a lower electrode on a substrate, a capacitor dielectric film extending on the lower electrode along a side surface of the lower electrode that is perpendicular to the substrate, an upper electrode on the capacitor dielectric film, an interface layer including a hydrogen blocking film and a hydrogen bypass film on the upper electrode, the hydrogen blocking film including a conductive material, and a contact plug penetrating the interface layer and electrically connected to the upper electrode.
Claims15
A semiconductor device comprising:
- a lower electrode on a substrate;
- a capacitor dielectric film extending on the lower electrode along a side surface of the lower electrode that is perpendicular to the substrate;
- an upper electrode on the capacitor dielectric film and on the lower electrode;
- an interface layer comprising a hydrogen blocking film and a hydrogen bypass film on the upper electrode, wherein the hydrogen bypass film comprises a conductive material;
- an interlayer insulating film on the interface layer;
- and
- a contact plug that penetrates the interlayer insulating film, the hydrogen blocking film and the hydrogen bypass film and is electrically connected to the upper electrode,
- wherein the hydrogen blocking film comprises an insulating material without silicon,
- wherein the hydrogen blocking film is between the upper electrode and the hydrogen bypass film,
- wherein the hydrogen bypass film extends along the hydrogen blocking film, and
- wherein the contact plug completely penetrates the hydrogen blocking film and contacts the upper electrode.
A semiconductor device comprising:
- a substrate comprising a cell region and a cell peripheral region;
- a lower electrode on the cell region;
- a capacitor dielectric film extending on the lower electrode along a side surface of the lower electrode that is perpendicular to the substrate;
- an upper electrode on the capacitor dielectric film;
- an interface layer comprising a hydrogen blocking film and a hydrogen bypass film on the upper electrode;
- a first interlayer insulating film on the interface layer;
- and
- a contact plug that penetrates the first interlayer insulating film, the hydrogen blocking film, and the hydrogen bypass film and is electrically connected to the upper electrode,
- wherein the hydrogen bypass film is on the cell region and not on the cell peripheral region of the substrate,
- wherein the hydrogen blocking film is between the upper electrode and the hydrogen bypass film,
- wherein the hydrogen bypass film extends along the hydrogen blocking film, and
- wherein the contact plug completely penetrates the hydrogen blocking film and contacts the upper electrode.
A semiconductor device comprising:
- a gate trench in a substrate;
- a gate electrode in a portion of the gate trench;
- a storage contact on at least one side of the gate electrode and contacting the substrate;
- a storage pad on the storage contact;
- a capacitor electrically connected to the storage pad;
- an interface layer comprising a hydrogen blocking film and a hydrogen bypass film on the capacitor;
- a first interlayer insulating film on the interface layer;
- and
- a contact plug that penetrates the first interlayer insulating film, the hydrogen blocking film and the hydrogen bypass film and is electrically connected to the capacitor,
- wherein the hydrogen blocking film is in contact with an upper electrode of the semiconductor device and comprises an insulating material, and the hydrogen bypass film comprises a metal material,
- wherein the hydrogen blocking film is between the upper electrode and the hydrogen bypass film,
- wherein the hydrogen bypass film extends along the hydrogen blocking film, and
- wherein the contact plug completely penetrates the hydrogen blocking film.
Dependencies are inferred from the claim text.