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US 11,700,725 B2Granted
Memory device and method for fabricating the same
AssigneeSK hynix Inc.
InventorKangsik Choi
Life of this patent
Estimating the term…
Abstract
A memory device includes a substrate, an active layer that is spaced apart from the substrate and laterally oriented, a word line that is laterally oriented in parallel to the active layer along one side of the active layer, an active body that is vertically oriented by penetrating through the active layer, a bit line that is vertically oriented by penetrating through the active layer to be spaced apart from one side of the active body, and a capacitor that is vertically oriented by penetrating through the active layer to be spaced apart from another side of the active body.
Claims15
A method for fabricating a memory device, comprising:
- forming a plurality of active layers arranged vertically with respect to a substrate;
- forming a vertically oriented active body that penetrates through the active layers to interconnect the active layers to each other;
- forming a vertically oriented bit line that is spaced apart from one side of the active body and penetrates through the active layers;
- forming a vertically oriented capacitor that is spaced apart from another side of the active body and penetrates through the active layers;
- and
- forming a plurality of word lines that are laterally oriented adjacent to one side of each of the active layers.
3 more elements
Dependencies are inferred from the claim text.