Method for manufacturing a semiconductor device using a support layer to form a gate structure
AssigneeSamsung Electronics Co., Ltd.
InventorsJaewha Park, Moonkeun Kim, Sukhoon Kim, Dongchan Lim
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Abstract
A semiconductor device manufacturing method according to the exemplary embodiments of the disclosure includes patterning a substrate, thereby forming an active pattern, forming a trench penetrating the active pattern, forming a support layer covering the trench, forming a first opening at the support layer, forming a gate electrode layer filling the trench through the first opening, and forming a bit line structure electrically connected to the active pattern. The support layer includes a base portion covering a top surface of the active pattern, and a support disposed in the trench.
Claims20
A method for manufacturing a semiconductor device, comprising:
- patterning a substrate, thereby forming an active pattern;
- forming a trench penetrating the active pattern;
- forming a support layer covering the trench;
- forming a first opening at the support layer;
- forming a gate electrode layer filling the trench through the first opening;
- and
- forming a bit line structure electrically connected to the active pattern,
- wherein the support layer comprises a base portion covering a top surface of the active pattern, and a support portion disposed in the trench.
A method for manufacturing a semiconductor device, comprising:
- patterning a substrate, thereby forming an active pattern;
- forming a trench penetrating the active pattern;
- forming a support layer on the active pattern;
- forming a first opening at the support layer;
- forming a gate electrode layer filling the trench through the first opening;
- and
- forming a bit line structure electrically connected to the active pattern,
- wherein the support layer and the gate electrode layer comprise the same conductive material.
A method for manufacturing a semiconductor device, comprising:
- patterning a substrate, thereby forming an active pattern;
- forming a trench penetrating the active pattern;
- forming a preliminary barrier layer in the trench;
- forming a support layer on the preliminary barrier layer;
- forming a first opening at the support layer;
- forming a gate electrode layer filling the trench through the first opening;
- and
- forming a bit line structure electrically connected to the active pattern,
- wherein the preliminary barrier layer and the support layer comprise the same conductive material.
Dependencies are inferred from the claim text.