Structures and methods for forming dynamic random-access devices
AssigneeApplied Materials, Inc.
InventorSony Varghese
Life of this patent
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Abstract
Disclosed are DRAM devices and methods of forming DRAM devices. One non-limiting method may include providing a device, the device including a plurality of angled structures formed from a substrate, a bitline and a dielectric between each of the plurality of angled structures, and a drain disposed along each of the plurality of angled structures. The method may further include providing a plurality of mask structures of a patterned masking layer over the plurality of angled structures, the plurality of mask structures being oriented perpendicular to the plurality of angled structures. The method may further include etching the device at a non-zero angle to form a plurality of pillar structures.
Claims15
A method, comprising:
- providing a plurality of mask structures over a plurality of angled structures of a device, the plurality of mask structures being oriented perpendicular to the plurality of angled structures;
- etching the device at a non-zero angle to form a plurality of pillar structures;
- and
- forming a plurality of wordlines over the plurality of pillar structures, wherein a first pillar structure of the plurality of pillar structures extends along a first main side and a second main side of a first wordline of the plurality of wordlines.
A method of forming a dynamic random-access memory (DRAM) device, comprising:
- providing a plurality of mask structures of a patterned masking layer over a plurality of angled structures, the plurality of mask structures being oriented perpendicular to the plurality of angled structures;
- etching the device at a second non-zero angle to form a plurality of pillar structures, each of the plurality of pillar structures comprising a first sidewall opposite a second sidewall and a third sidewall opposite a fourth sidewall;
- and
- forming a plurality of wordlines along the plurality of pillar structures, wherein the plurality of wordlines wrap entirely around the first sidewall, the second sidewall, the third sidewall, and the fourth sidewall of each of the plurality of pillar structures.
Dependencies are inferred from the claim text.