Image sensor and method of manufacturing same

An image sensor, comprising:

• a semiconductor layer including a photoelectric transformation element and an electrical charge storage element therein;
• a storage gate on the semiconductor layer;
• an insulating layer on an upper surface of the semiconductor layer;
• an upper insulating film on the insulating layer;
• a color filter on the upper insulating film in a pixel region;
• a lens on the color filter, focusing incident light on the photoelectric transformation element in a corresponding pixel;
• and
• a shield including a substantially vertical extension and a substantially horizontal extension at least partially in the upper insulating film, configured to block light that might otherwise impinge upon the electrical charge storage element or an area above the electrical charge storage element, wherein:
• the shield comprises one or more side walls extending vertically from the semiconductor layer above the electrical charge storage element, and an overlying layer above the one or more side walls configured to block incident light and comprising a metal, and
• the overlying layer extends substantially horizontally at a position spaced upwardly from an uppermost end of the one or more side walls.

A method of manufacturing an image sensor, the method comprising:

• forming a photoelectric transformation element and an electrical charge storage element in a semiconductor layer;
• forming a storage gate on the semiconductor layer;
• depositing an insulating layer on an upper surface of the semiconductor layer and an outer surface of the storage gate;
• depositing a first insulating film on the insulating layer to a first height;
• forming a hole or trench in the first insulating film;
• forming one or more side walls by filling the hole or trench with a metal;
• forming an overlying layer comprising a metal on the first insulating film and the one or more side walls;
• and
• depositing a second insulating film on the first insulating film and the overlying layer to a second height, wherein
• the one or more side walls extend vertically from the semiconductor layer, above the electrical charge storage element and
• the overlying layer is configured to block incident light and is in contact with an uppermost end of the one or more side walls to cover an uppermost surface of the one or more side walls and extends outwardly farther than outermost portions of the uppermost surface of the one or more side walls.