Semiconductor chip, electronic device and electrostatic discharge protection method for electronic device thereof
AssigneeNanya Technology Corporation
InventorChun-Lu Lee
Life of this patent
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Abstract
The present application discloses a semiconductor chip, an electronic device and an electrostatic discharge (ESD) protection method for an electronic device thereof. The semiconductor chip includes an operation electrical contact, a detection electrical contact, an ESD protection unit, and a logic circuit. The operation electrical contact receives an operation signal. The detection electrical contact receives a chip connection signal. The ESD protection unit is coupled to the operation electrical contact. The logic circuit is coupled to the detection electrical contact, and adjusts capacitance of the ESD protection unit according to a chip connection signal received by the detection electrical contact.
Claims18
A semiconductor chip, comprising:
- an operation electrical contact configured to receive an operation signal;
- and
- a detection electrical contact configured to receive a first chip connection signal;
- an electrostatic discharge (ESD) protection unit coupled to the operation electrical contact;
- and
- a logic circuit coupled to the detection electrical contact, and configured to adjust capacitance of the ESD protection unit according to at least the first chip connection signal;
- wherein the ESD protection unit comprises:
- a first ESD protection element coupled between the operation electrical contact and a voltage terminal;
- a second ESD protection element;
- and
- a control circuit coupled in series with the second ESD protection element between the operation electrical contact and the voltage terminal;
- wherein the voltage terminal is coupled to a ground or a power voltage.
An electronic device comprising:
- a first semiconductor chip comprising:
- a first operation electrical contact;
- a first detection electrical contact;
- a first electrostatic discharge (ESD) protection unit coupled to the first operation electrical contact;
- and
- a first logic circuit coupled to the first detection electrical contact, and configured to adjust capacitance of the first ESD protection unit according to at least a first chip connection signal received by the first detection electrical contact;
- a second semiconductor chip comprising:
- a second operation electrical contact coupled to the first operation electrical contact;
- a second detection electrical contact;
- a second electrostatic discharge (ESD) protection unit coupled to the second operation electrical contact;
- and
- a second logic circuit coupled to the second detection electrical contact, and configured to adjust capacitance of the second ESD protection unit according to at least a second chip connection signal received by the second detection electrical contact;
- wherein the first ESD protection unit comprises:
- a first ESD protection element coupled between the first operation electrical contact and a voltage terminal;
- a second ESD protection element;
- and
- a control circuit coupled in series with the second ESD protection element between the first operation electrical contact and the voltage terminal;
- wherein the voltage terminal is coupled to a ground or a power voltage.
An electrostatic discharge (ESD) protection method for an electronic device, the electronic device comprising a plurality of semiconductor chips, and the method comprising:
- forming an ESD protection unit in each of the plurality of semiconductor chips, wherein the ESD protection unit is coupled between a voltage terminal and an operation electrical contact of the each of the plurality of semiconductor chips, wherein the voltage terminal is coupled to a ground or a power voltage;
- wherein the ESD protection unit comprises a first ESD protection element coupled between the operation electrical contact and the voltage terminal;
- a second ESD protection element;
- and a control circuit coupled in series with the second ESD protection element between the operation electrical contact and the voltage terminal;
- where in the voltage terminal is coupled to a ground or a power voltage;
- coupling a first operation electrical contact of a first semiconductor chip of the plurality of semiconductor chips to at least one operation electrical contact of at least one other semiconductor chip of the plurality of semiconductor chips;
- and
- adjusting capacitance of a plurality of ESD protection units of the plurality of semiconductor chips according to a total quantity of semiconductor chips in the electronic device.
Dependencies are inferred from the claim text.