Electronic device and electrostatic discharge protection circuit
AssigneeInnoscience (Zhuhai) Technology Co., Ltd.
InventorsHang Liao, Chunhua Zhou
Life of this patent
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Abstract
An electronic device includes a first group III nitride transistor and an electrostatic discharge (ESD) protection circuit. The ESD protection circuit includes a diode and a second transistor. The diode has an anode electrically connected to a gate of the first group III nitride transistor. The second transistor has a drain electrically connected to the gate of the first group III nitride transistor, a gate electrically connected to a cathode of the diode and a source electrically connected to a source of the first group III nitride transistor.
Claims18
An electronic device, comprising:
- a first III-V compound semiconductor layer;
- a second III-V compound semiconductor layer disposed on the first III-V compound semiconductor layer, wherein the second III-V compound semiconductor layer has a relatively greater band gap than that of the first III-V compound semiconductor layer, so as to generate a two-dimensional electron gas (2DEG) region at a heterostructure between the first III-V compound semiconductor layer and the second III-V compound semiconductor layer;
- a first group III nitride transistor disposed on the second III-V compound semiconductor layer;
- and
- an electrostatic discharge (ESD) protection circuit comprising:
- a diode disposed on the second III-V compound semiconductor layer and having an anode electrically connected to a gate of the first group III nitride transistor;
- and
- a second transistor disposed on the second III-V compound semiconductor layer and having a drain electrically connected to the gate of the first group III nitride transistor, a gate electrically connected to a cathode of the diode and a source electrically connected to a source of the first group III nitride transistor, wherein the first group III nitride transistor, the diode, and the second transistor are arranged in a direction parallel to a top surface of the second III-V compound semiconductor layer and collectively share the 2DEG region, wherein the second transistor is located between the first group III nitride transistor and the diode along the direction.
An electronic device, comprising:
- a first III-V compound semiconductor layer;
- a second III-V compound semiconductor layer disposed on the first III-V compound semiconductor layer, wherein the second III-V compound semiconductor layer has a relatively greater band gap than that of the first III-V compound semiconductor layer, so as to generate a two-dimensional electron gas (2DEG) region at a heterostructure between the first III-V compound semiconductor layer and the second III-V compound semiconductor layer;
- a first group III nitride transistor disposed on the second III-V compound semiconductor layer;
- and
- an electrostatic discharge (ESD) protection circuit electrically connected between a gate of the first group III nitride transistor and a source of the first group III nitride transistor, the ESD protection circuit comprising N diodes disposed on the second III-V compound semiconductor layer and electrically connected in series,
- wherein N is an integer equal to or greater than 2, and
- wherein threshold voltages of the diodes have a variation less than 0.3V, wherein the first group III nitride transistor and the N diodes are arranged in a direction parallel to a top surface of the second III-V compound semiconductor layer and collectively share the 2DEG region.
Dependencies are inferred from the claim text.