Patterned electrode structure for image sensor

An image sensor, comprising:

• a plurality of pixels, wherein each of the pixels comprises a plurality of sub-pixels, and each of the sub-pixels comprises an electrode structure, and wherein each of the electrode structures comprises:
• a top electrode comprising a plurality of inner electrodes and an outer electrode connected with the inner electrodes, wherein the inner electrodes are configured to filter a light by wavelength range and filter the light into a polarized light, each of the inner electrodes comprises:
• a metal structure having a first portion and a second portion extending along a first direction;
• and
• a dielectric structure extending along the first direction, wherein the dielectric structure is located between the first portion and the second portion of the metal structure, the first portion, the dielectric structure, and the second portion are arranged in a second direction different form the first direction;
• a bottom electrode located below the top electrode, wherein the top electrode and the bottom electrode are stacked along a third direction perpendicular to the first direction and the second direction;
• and
• a photoelectric conversion layer configured to convert light into electric signals, wherein the photoelectric conversion layer is located between the top electrode and the bottom electrode;
• wherein the inner electrodes comprise a plurality of intermediate layers configured to improve carrier transportation performance, wherein the intermediate layers are located between the corresponding metal structures and the photoelectric conversion layer.