Schottky barrier diode

A Schottky barrier diode comprising:

• a semiconductor substrate made of gallium oxide;
• a drift layer made of gallium oxide and provided on the semiconductor substrate;
• an anode electrode that is in Schottky contact with the drift layer;
• and
• a cathode electrode that is in ohmic contact with the semiconductor substrate,
• wherein the drift layer has an outer peripheral trench formed at a position surrounding the anode electrode in a plan view,
• wherein the outer peripheral trench has a curved bottom surface,
• wherein the drift layer further has a plurality of center trenches formed at a position overlapping the anode electrode in a plan view,
• wherein a maximum depth of the outer peripheral trench is larger than a maximum depth of the center trenches, and
• wherein the anode electrode does not overlap the outer peripheral trench.

A Schottky barrier diode comprising:

• a semiconductor substrate made of gallium oxide;
• a drift layer made of gallium oxide and provided on the semiconductor substrate;
• an anode electrode that is in Schottky contact with the drift layer;
• and
• a cathode electrode that is in ohmic contact with the semiconductor substrate,
• wherein the drift layer has an outer peripheral trench formed at a position surrounding the anode electrode in a plan view,
• wherein the outer peripheral trench has a curved bottom surface,
• wherein the drift layer further has a plurality of center trenches formed at a position overlapping the anode electrode in a plan view,
• wherein a mesa width between the outer peripheral trench and one of the center trenches positioned closest to the outer peripheral trench is smaller than a mesa width between the plurality of center trenches, and
• wherein the outer peripheral trench is not covered by the anode electrode.