Semiconductor device
AssigneeSamsung Electronics Co., Ltd.
InventorsJinseong Heo, Taehwan Moon, Hagyoul Bae, Seunggeol Nam, Sangwook Kim, Kwanghee Lee
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Abstract
A semiconductor apparatus includes a plurality of semiconductor devices. The semiconductor devices each include a ferroelectric layer, a conductive metal oxide layer, and a semiconductor layer, between two electrodes. The conductive metal oxide layer may be between the ferroelectric layer and the semiconductor layer. The ferroelectric layer, the conductive metal oxide layer, and the semiconductor layer may all include a metal oxide. The conductive metal oxide layer may include one or more materials selected from the group consisting of an indium oxide, a zinc oxide, a tin oxide, and any combination thereof.
Claims25
A semiconductor device, comprising:
- a first electrode;
- a second electrode isolated from direct contact with the first electrode;
- a ferroelectric layer;
- a conductive metal oxide layer;
- and
- a semiconductor layer,
- wherein the ferroelectric layer, the conductive metal oxide layer, and the semiconductor layer are between the first electrode and the second electrode, and
- wherein a difference in lattice constant between the conductive metal oxide layer and the ferroelectric layer is equal to or less than 10%.
A semiconductor apparatus, comprising:
- a stack structure in which a plurality of insulating layers and a plurality of first electrodes are alternately and repeatedly stacked in a vertical direction;
- and
- a cell string including a ferroelectric layer, a conductive metal oxide layer, a semiconductor layer, and a second electrode,
- wherein the cell string penetratesthe stack structure in the vertical direction,
- wherein, in the cell string, the ferroelectric layer, the conductive metal oxide layer, and the semiconductor layer are between a first electrode of the plurality of first electrodes and the second electrode, and
- wherein a difference in lattice constant between the conductive metal oxide layer and the ferroelectric layer is equal to or less than 10%.
A semiconductor device, comprising:
- a memory element that is configured to store information, the memory element including a ferroelectric layer;
- a selection element electrically connected to the memory element, the selection element configured to perform selection of the semiconductor device based on controlling a flow of an electric current through the memory element, the selection element including a semiconductor layer;
- and
- a conductive metal oxide layer,
- wherein the ferroelectric layer and the semiconductor layer are coupled to each other between two electrodes, and no terminals are between the ferroelectric layer and the semiconductor layer, and wherein a difference in lattice constant between the conductive metal oxide layer and the ferroelectric layer is equal to or less than 10%.
Dependencies are inferred from the claim text.